IndiumV3, Main, Repository, bibRecord, 003863

Structural characterization of sputtered indium oxide films deposited at room temperature

Identifieur interne : 003863 ( Main/Repository ); précédent : 003862; suivant : 003864

Structural characterization of sputtered indium oxide films deposited at room temperature

Auteurs : RBID : Pascal:10-0372229

Descripteurs français

Pascal (Inist)
- Dépôt pulvérisation, Couche mince, Pulvérisation réactive, Dépôt physique phase vapeur, Pulvérisation cathodique, Recuit, Nanostructure, Nanocristal, Réseau cubique, Grosseur grain, Effet concentration, Atmosphère contrôlée, Cristallinité, Réseau rhomboédrique, Oxyde d'indium, Transition phase, Propriété optique, Limite absorption, In2O3, 8115C, 8107, 6855J, 7866.

English descriptors

KwdEn :
- Absorption edge, Annealing, Cathode sputtering, Controlled atmospheres, Crystallinity, Cubic lattices, Grain size, Indium oxide, Nanocrystal, Nanostructures, Optical properties, Phase transitions, Physical vapor deposition, Quantity ratio, Reactive sputtering, Sputter deposition, Thin films, Trigonal lattices.

Abstract

Structural evolution of indium oxide thin films deposited at room temperature by reactive magnetron sputtering and annealing in a reducing atmosphere were investigated. The as deposited indium oxide (In₂O₃) films showed a dominating randomly oriented nanocrystalline structure of cubic In₂O₃. The grain size decreased with increasing oxygen concentration in the plasma. Annealing in reducing atmospheres (vacuum, nitrogen and argon), besides improving the crystallinity, led to a partial cubic to rhombohedral phase transition in the indium oxide films. Annealing improved the optical properties of the indium oxide film and shifted the absorption edge to higher energies.

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Pascal:10-0372229

Le document en format XML

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<author><name sortKey="Hotovy, I" uniqKey="Hotovy I">I. Hotovy</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Microelectronics, Slovak University of Technology, Ilkovicova 3</s1>
<s2>812 19 Bratislava</s2>
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<author><name sortKey="Kadlecikova, M" uniqKey="Kadlecikova M">M. Kadlecikova</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Microelectronics, Slovak University of Technology, Ilkovicova 3</s1>
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<author><name sortKey="Breza, J" uniqKey="Breza J">J. Breza</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Microelectronics, Slovak University of Technology, Ilkovicova 3</s1>
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<author><name sortKey="Goldhahn, R" uniqKey="Goldhahn R">R. Goldhahn</name>
<affiliation wicri:level="1"><inist:fA14 i1="04"><s1>FG Exprimentalphysik I, Institut für Physik, TU Ilmenau, Postfach 100565</s1>
<s2>98684 Ilmenau</s2>
<s3>DEU</s3>
<sZ>7 aut.</sZ>
<sZ>8 aut.</sZ>
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<country>Allemagne</country>
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</author>
<author><name sortKey="Rehacek, V" uniqKey="Rehacek V">V. Rehacek</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Microelectronics, Slovak University of Technology, Ilkovicova 3</s1>
<s2>812 19 Bratislava</s2>
<s3>SVK</s3>
<sZ>1 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>6 aut.</sZ>
<sZ>9 aut.</sZ>
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<country>Slovaquie</country>
<wicri:noRegion>812 19 Bratislava</wicri:noRegion>
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<date when="2010">2010</date>
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<seriesStmt><idno type="ISSN">0040-6090</idno>
<title level="j" type="abbreviated">Thin solid films</title>
<title level="j" type="main">Thin solid films</title>
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<term>Annealing</term>
<term>Cathode sputtering</term>
<term>Controlled atmospheres</term>
<term>Crystallinity</term>
<term>Cubic lattices</term>
<term>Grain size</term>
<term>Indium oxide</term>
<term>Nanocrystal</term>
<term>Nanostructures</term>
<term>Optical properties</term>
<term>Phase transitions</term>
<term>Physical vapor deposition</term>
<term>Quantity ratio</term>
<term>Reactive sputtering</term>
<term>Sputter deposition</term>
<term>Thin films</term>
<term>Trigonal lattices</term>
</keywords>
<keywords scheme="Pascal" xml:lang="fr"><term>Dépôt pulvérisation</term>
<term>Couche mince</term>
<term>Pulvérisation réactive</term>
<term>Dépôt physique phase vapeur</term>
<term>Pulvérisation cathodique</term>
<term>Recuit</term>
<term>Nanostructure</term>
<term>Nanocristal</term>
<term>Réseau cubique</term>
<term>Grosseur grain</term>
<term>Effet concentration</term>
<term>Atmosphère contrôlée</term>
<term>Cristallinité</term>
<term>Réseau rhomboédrique</term>
<term>Oxyde d'indium</term>
<term>Transition phase</term>
<term>Propriété optique</term>
<term>Limite absorption</term>
<term>In2O3</term>
<term>8115C</term>
<term>8107</term>
<term>6855J</term>
<term>7866</term>
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<front><div type="abstract" xml:lang="en">Structural evolution of indium oxide thin films deposited at room temperature by reactive magnetron sputtering and annealing in a reducing atmosphere were investigated. The as deposited indium oxide (In<sub>2</sub>
O<sub>3</sub>
) films showed a dominating randomly oriented nanocrystalline structure of cubic In<sub>2</sub>
O<sub>3</sub>
. The grain size decreased with increasing oxygen concentration in the plasma. Annealing in reducing atmospheres (vacuum, nitrogen and argon), besides improving the crystallinity, led to a partial cubic to rhombohedral phase transition in the indium oxide films. Annealing improved the optical properties of the indium oxide film and shifted the absorption edge to higher energies.</div>
</front>
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<fA08 i1="01" i2="1" l="ENG"><s1>Structural characterization of sputtered indium oxide films deposited at room temperature</s1>
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<fA09 i1="01" i2="1" l="ENG"><s1>Proceedings of the EMRS 2009 Spring Meeting Symposium H: Synthesis, Processing and Characterization of Nanoscale Multi Functional Oxide Films II</s1>
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<fA11 i1="01" i2="1"><s1>HOTOVY (I.)</s1>
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<s9>ed.</s9>
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<fA12 i1="02" i2="1"><s1>GUILLOUX-VIRY (Maryline)</s1>
<s9>ed.</s9>
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<fA12 i1="03" i2="1"><s1>ALEXE (Marin)</s1>
<s9>ed.</s9>
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<fA12 i1="04" i2="1"><s1>COSTA KRÄMER (José L.)</s1>
<s9>ed.</s9>
</fA12>
<fA12 i1="05" i2="1"><s1>MOSNIER (Jean-Paul)</s1>
<s9>ed.</s9>
</fA12>
<fA14 i1="01"><s1>Department of Microelectronics, Slovak University of Technology, Ilkovicova 3</s1>
<s2>812 19 Bratislava</s2>
<s3>SVK</s3>
<sZ>1 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>6 aut.</sZ>
<sZ>9 aut.</sZ>
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<fA14 i1="02"><s1>FG Nanotechnologie, Institut für Mikro- und Nanoelektronik, TU Ilmenau, Postfach 100565</s1>
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<s3>DEU</s3>
<sZ>2 aut.</sZ>
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<fA14 i1="03"><s1>FG Werkstoffe der Elektrotechnik, Institut für Werkstofftechnik, TU Ilmenau, Postfach 100565</s1>
<s2>98684 Ilmenau</s2>
<s3>DEU</s3>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
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<fA14 i1="04"><s1>FG Exprimentalphysik I, Institut für Physik, TU Ilmenau, Postfach 100565</s1>
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<sZ>7 aut.</sZ>
<sZ>8 aut.</sZ>
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<fA15 i1="01"><s1>National Institute for Laser, Plasma and Radiation Physics</s1>
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<s3>ROU</s3>
<sZ>1 aut.</sZ>
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<fA15 i1="02"><s1>University of Florida</s1>
<s3>USA</s3>
<sZ>1 aut.</sZ>
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<fA15 i1="03"><s1>University of Rennes 1</s1>
<s3>FRA</s3>
<sZ>2 aut.</sZ>
</fA15>
<fA15 i1="04"><s1>Max Planck Institute of Microstructure Physics</s1>
<s2>Halle</s2>
<s3>DEU</s3>
<sZ>3 aut.</sZ>
</fA15>
<fA15 i1="05"><s1>Instituto de Microelectronica de Madrid</s1>
<s3>ESP</s3>
<sZ>4 aut.</sZ>
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<fA15 i1="06"><s1>Dublin City University</s1>
<s3>IRL</s3>
<sZ>5 aut.</sZ>
</fA15>
<fA18 i1="01" i2="1"><s1>European Materials Research Society (EMRS)</s1>
<s2>Strasbourg</s2>
<s3>FRA</s3>
<s9>org-cong.</s9>
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<fA20><s1>4508-4511</s1>
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<fA21><s1>2010</s1>
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<fA23 i1="01"><s0>ENG</s0>
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<fA43 i1="01"><s1>INIST</s1>
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<fA44><s0>0000</s0>
<s1>© 2010 INIST-CNRS. All rights reserved.</s1>
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<fA47 i1="01" i2="1"><s0>10-0372229</s0>
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<fA60><s1>P</s1>
<s2>C</s2>
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<fA61><s0>A</s0>
</fA61>
<fA64 i1="01" i2="1"><s0>Thin solid films</s0>
</fA64>
<fA66 i1="01"><s0>NLD</s0>
</fA66>
<fC01 i1="01" l="ENG"><s0>Structural evolution of indium oxide thin films deposited at room temperature by reactive magnetron sputtering and annealing in a reducing atmosphere were investigated. The as deposited indium oxide (In<sub>2</sub>
O<sub>3</sub>
) films showed a dominating randomly oriented nanocrystalline structure of cubic In<sub>2</sub>
O<sub>3</sub>
. The grain size decreased with increasing oxygen concentration in the plasma. Annealing in reducing atmospheres (vacuum, nitrogen and argon), besides improving the crystallinity, led to a partial cubic to rhombohedral phase transition in the indium oxide films. Annealing improved the optical properties of the indium oxide film and shifted the absorption edge to higher energies.</s0>
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<s5>01</s5>
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<s5>01</s5>
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<s5>05</s5>
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<s5>05</s5>
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<fC03 i1="06" i2="3" l="FRE"><s0>Recuit</s0>
<s5>06</s5>
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<fC03 i1="06" i2="3" l="ENG"><s0>Annealing</s0>
<s5>06</s5>
</fC03>
<fC03 i1="07" i2="3" l="FRE"><s0>Nanostructure</s0>
<s5>07</s5>
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<s5>07</s5>
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<s5>08</s5>
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<s5>08</s5>
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<s5>08</s5>
</fC03>
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<s5>09</s5>
</fC03>
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<s5>09</s5>
</fC03>
<fC03 i1="10" i2="3" l="FRE"><s0>Grosseur grain</s0>
<s5>10</s5>
</fC03>
<fC03 i1="10" i2="3" l="ENG"><s0>Grain size</s0>
<s5>10</s5>
</fC03>
<fC03 i1="11" i2="3" l="FRE"><s0>Effet concentration</s0>
<s5>11</s5>
</fC03>
<fC03 i1="11" i2="3" l="ENG"><s0>Quantity ratio</s0>
<s5>11</s5>
</fC03>
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<s5>12</s5>
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<s5>12</s5>
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<s5>13</s5>
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<s5>13</s5>
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<fC03 i1="13" i2="X" l="SPA"><s0>Cristalinidad</s0>
<s5>13</s5>
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<fC03 i1="14" i2="3" l="FRE"><s0>Réseau rhomboédrique</s0>
<s5>14</s5>
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<fC03 i1="14" i2="3" l="ENG"><s0>Trigonal lattices</s0>
<s5>14</s5>
</fC03>
<fC03 i1="15" i2="X" l="FRE"><s0>Oxyde d'indium</s0>
<s5>15</s5>
</fC03>
<fC03 i1="15" i2="X" l="ENG"><s0>Indium oxide</s0>
<s5>15</s5>
</fC03>
<fC03 i1="15" i2="X" l="SPA"><s0>Indio óxido</s0>
<s5>15</s5>
</fC03>
<fC03 i1="16" i2="X" l="FRE"><s0>Transition phase</s0>
<s5>29</s5>
</fC03>
<fC03 i1="16" i2="X" l="ENG"><s0>Phase transitions</s0>
<s5>29</s5>
</fC03>
<fC03 i1="16" i2="X" l="SPA"><s0>Transición fase</s0>
<s5>29</s5>
</fC03>
<fC03 i1="17" i2="3" l="FRE"><s0>Propriété optique</s0>
<s5>30</s5>
</fC03>
<fC03 i1="17" i2="3" l="ENG"><s0>Optical properties</s0>
<s5>30</s5>
</fC03>
<fC03 i1="18" i2="3" l="FRE"><s0>Limite absorption</s0>
<s5>31</s5>
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<fC03 i1="18" i2="3" l="ENG"><s0>Absorption edge</s0>
<s5>31</s5>
</fC03>
<fC03 i1="19" i2="3" l="FRE"><s0>In2O3</s0>
<s4>INC</s4>
<s5>46</s5>
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<s4>INC</s4>
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<s4>INC</s4>
<s5>72</s5>
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<fC03 i1="22" i2="3" l="FRE"><s0>6855J</s0>
<s4>INC</s4>
<s5>73</s5>
</fC03>
<fC03 i1="23" i2="3" l="FRE"><s0>7866</s0>
<s4>INC</s4>
<s5>74</s5>
</fC03>
<fN21><s1>242</s1>
</fN21>
<fN44 i1="01"><s1>OTO</s1>
</fN44>
<fN82><s1>OTO</s1>
</fN82>
</pA>
<pR><fA30 i1="01" i2="1" l="ENG"><s1>EMRS 2009 Spring Meeting. Symposium H "Synthesis, Processing and Characterization of Nanoscale Multi Functional Oxide Films"</s1>
<s3>Strasbourg FRA</s3>
<s4>2009-06-08</s4>
</fA30>
</pR>
</standard>
</inist>
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   |texte=   Structural characterization of sputtered indium oxide films deposited at room temperature
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Structural characterization of sputtered indium oxide films deposited at room temperature

Structural characterization of sputtered indium oxide films deposited at room temperature

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